FDC86244 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 150V 2.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
auf Bestellung 231000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.84 EUR |
| 6000+ | 0.8 EUR |
| 9000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDC86244 onsemi
Description: MOSFET N-CH 150V 2.3A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V.
Weitere Produktangebote FDC86244 nach Preis ab 0.8 EUR bis 2.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDC86244 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 2.3A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 144mOhm @ 2.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
auf Bestellung 232977 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDC86244 | Hersteller : onsemi / Fairchild |
MOSFET 150V N-Channel PowerTrench MOSFET |
auf Bestellung 2429 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
FDC86244 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2.3A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| FDC86244 |
FDC86244 Транзисторы MOS FET Power |
auf Bestellung 11 Stücke: Lieferzeit 7-21 Tag (e) |
|||||||||||||||||||
|
FDC86244 Produktcode: 142730 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
| FDC86244 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 2.3A On-state resistance: 273mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 6nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
FDC86244 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2.3A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDC86244 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 2.3A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDC86244 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 2.3A On-state resistance: 273mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 6nC |
Produkt ist nicht verfügbar |