auf Bestellung 2340 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
22+ | 2.4 EUR |
25+ | 2.1 EUR |
100+ | 1.61 EUR |
500+ | 1.27 EUR |
Produktrezensionen
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Technische Details FDD10N20LZTM onsemi / Fairchild
Description: MOSFET N-CH 200V 7.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 25 V.
Weitere Produktangebote FDD10N20LZTM
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDD10N20LZTM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD10N20LZTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 83W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDD10N20LZTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 7.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDD10N20LZTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 83W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |