FDD1600N10ALZD ON Semiconductor / Fairchild

Description: MOSFET N-CH 100V 6.8A TO252-4L, Packaging: Bulk, Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V, Power Dissipation (Max): 14.9W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: TO-252-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V.