FDD2570 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 150V 4.7A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V
Description: MOSFET N-CH 150V 4.7A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V
auf Bestellung 84908 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
207+ | 3.8 EUR |
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Technische Details FDD2570 Fairchild Semiconductor
Description: MOSFET N-CH 150V 4.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V, Power Dissipation (Max): 3.2W (Ta), 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V.
Weitere Produktangebote FDD2570
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDD2570 | Hersteller : FAIRCHILD | 07+ TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2570 | Hersteller : FAIRCHILD | D-PAK/ TO-252 |
auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2570 | Hersteller : FAIRCHILD | TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2570 | Hersteller : ONSEMI |
Description: ONSEMI - FDD2570 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 84908 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD2570 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.7A, 10V Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1907 pF @ 75 V |
Produkt ist nicht verfügbar |
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FDD2570 | Hersteller : onsemi / Fairchild | MOSFET 150V NCh PowerTrench |
Produkt ist nicht verfügbar |