FDD2670 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Description: MOSFET N-CH 200V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.9 EUR |
5000+ | 1.83 EUR |
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Produktbewertung abgeben
Technische Details FDD2670 onsemi
Description: MOSFET N-CH 200V 3.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V, Power Dissipation (Max): 3.2W (Ta), 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V.
Weitere Produktangebote FDD2670 nach Preis ab 1.89 EUR bis 4.29 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FDD2670 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 3.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V |
auf Bestellung 7496 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2670 | Hersteller : onsemi / Fairchild | MOSFET N-CH 200V 18A Q-FET |
auf Bestellung 2547 Stücke: Lieferzeit 14-28 Tag (e) |
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FDD2670 | Hersteller : FAIRCHILD |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2670 | Hersteller : FAIRCHILD | 07+ TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2670 | Hersteller : FAIRCHILD | D-PAK/ TO-252 |
auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2670 | Hersteller : FAIRCHILD | TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2670 | Hersteller : fairchild | to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD2670 Produktcode: 126745 |
IC > IC andere |
Produkt ist nicht verfügbar
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FDD2670 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD2670 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD2670 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.6A Pulsed drain current: 20A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 275mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDD2670 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.6A Pulsed drain current: 20A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 275mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |