FDD3N40TM onsemi
Hersteller: onsemiDescription: MOSFET N-CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.65 EUR |
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Technische Details FDD3N40TM onsemi
Description: MOSFET N-CH 400V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V.
Weitere Produktangebote FDD3N40TM nach Preis ab 0.65 EUR bis 3.01 EUR
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FDD3N40TM | Hersteller : onsemi |
Description: MOSFET N-CH 400V 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V |
auf Bestellung 4536 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD3N40TM | Hersteller : onsemi / Fairchild |
MOSFET 400V N-CH MOSFET |
auf Bestellung 6307 Stücke: Lieferzeit 14-28 Tag (e) |
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| FDD3N40TM | Hersteller : ON-Semicoductor |
N-Channel 400V 2A (Tc) 30W (Tc) Surface Mount D-Pak FDD3N40TM ON Semiconductor TFDD3n40tm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD3N40TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R |
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FDD3N40TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R |
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FDD3N40TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK T/R |
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FDD3N40TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDD3N40TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |