FDD4685 onsemi
Hersteller: onsemiDescription: MOSFET P-CH 40V 8.4A/32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.42 EUR |
| 5000+ | 1.35 EUR |
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Technische Details FDD4685 onsemi
Description: MOSFET P-CH 40V 8.4A/32A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V.
Weitere Produktangebote FDD4685 nach Preis ab 0.72 EUR bis 3.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1224 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1224 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -32A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2290 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -32A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2290 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : onsemi |
Description: MOSFET P-CH 40V 8.4A/32A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V |
auf Bestellung 5491 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD4685 | Hersteller : onsemi / Fairchild |
MOSFET -40V P-Channel PowerTrench MOSFET |
auf Bestellung 9346 Stücke: Lieferzeit 14-28 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Description: ONSEMI - FDD4685 - Leistungs-MOSFET, p-Kanal, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 69W Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.023ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 |
auf Bestellung 24072 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ONSEMI |
Description: ONSEMI - FDD4685 - Leistungs-MOSFET, p-Kanal, 40 V, 32 A, 0.023 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 69W Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.023ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 |
auf Bestellung 24072 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FDD4685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |