FDD5810-F085
Technische Details FDD5810-F085
Description: MOSFET N-CH 60V 7.4A/37A DPAK, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V, Power Dissipation (Max): 72W (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: D-PAK (TO-252), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.
Preis FDD5810-F085 ab 0 EUR bis 0 EUR
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FDD5810-F085 Hersteller: ON Semiconductor Trans MOSFET N-CH 60V 7.4A Automotive 3-Pin(2+Tab) DPAK T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: ON Semiconductor / Fairchild MOSFET LOW VOLTAGE
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FDD5810-F085 Hersteller: ON Semiconductor Trans MOSFET N-CH 60V 7.4A Automotive 3-Pin(2+Tab) DPAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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FDD5810-F085 Hersteller: Rochester Electronics, LLC Description: MOSFET N-CH 60V 7.4A/37A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1.89pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 72W (Tc)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: ON Semiconductor Description: MOSFET N-CH 60V 7.4A/37A DPAK Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Power Dissipation (Max): 72W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: ON Semiconductor Description: MOSFET N-CH 60V 7.4A/37A DPAK Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Power Dissipation (Max): 72W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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