Technische Details FDD8580 FAIRCHIL
Description: MOSFET N-CH 20V 35A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V, Power Dissipation (Max): 49.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V.
Weitere Produktangebote FDD8580
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| FDD8580 | Hersteller : FAIRCHILD |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD8580 | Hersteller : fairchild |
07+ to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD8580 | Hersteller : fairchild |
to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8580 Produktcode: 155620 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FDD8580 | Hersteller : onsemi |
Description: MOSFET N-CH 20V 35A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V Power Dissipation (Max): 49.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDD8580 | Hersteller : onsemi |
Description: MOSFET N-CH 20V 35A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V Power Dissipation (Max): 49.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V |
Produkt ist nicht verfügbar |