FDD86113LZ onsemi / Fairchild
auf Bestellung 13496 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 2.96 EUR |
| 22+ | 2.4 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.31 EUR |
| 2500+ | 1.21 EUR |
| 5000+ | 1.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDD86113LZ onsemi / Fairchild
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V, Power Dissipation (Max): 3.1W (Ta), 29W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V.
Weitere Produktangebote FDD86113LZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
FDD86113LZ | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 100V 4.2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
FDD86113LZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 4.2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
FDD86113LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
Produkt ist nicht verfügbar |
|
|
|
FDD86113LZ | Hersteller : onsemi |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
Produkt ist nicht verfügbar |