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FDD86367

FDD86367 onsemi

fdd86367-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.16 EUR
Mindestbestellmenge: 2500
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Technische Details FDD86367 onsemi

Description: MOSFET N-CH 80V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V, Power Dissipation (Max): 227W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote FDD86367 nach Preis ab 1.57 EUR bis 5.17 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDD86367 FDD86367 Hersteller : ON Semiconductor fdd86367-d.pdf Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+2.33 EUR
Mindestbestellmenge: 2500
FDD86367 FDD86367 Hersteller : ONSEMI fdd86367-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2051 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.46 EUR
33+ 2.22 EUR
43+ 1.67 EUR
46+ 1.57 EUR
Mindestbestellmenge: 30
FDD86367 FDD86367 Hersteller : ONSEMI fdd86367-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2051 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.46 EUR
33+ 2.22 EUR
43+ 1.67 EUR
46+ 1.57 EUR
Mindestbestellmenge: 30
FDD86367 FDD86367 Hersteller : onsemi fdd86367-d.pdf Description: MOSFET N-CH 80V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40605 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 3.01 EUR
100+ 2.39 EUR
500+ 2.16 EUR
Mindestbestellmenge: 8
FDD86367 FDD86367 Hersteller : onsemi / Fairchild FDD86367_D-2312039.pdf MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET
auf Bestellung 5004 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.17 EUR
13+ 4.32 EUR
100+ 3.43 EUR
250+ 3.35 EUR
500+ 2.91 EUR
1000+ 2.47 EUR
2500+ 2.33 EUR
Mindestbestellmenge: 11
FDD86367 FDD86367 Hersteller : ON Semiconductor fdd86367-d.pdf Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
FDD86367 FDD86367 Hersteller : ON Semiconductor fdd86367-d.pdf Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar