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FDD9511L-F085 ON Semiconductor


fdd9511l-f085-d.pdf Hersteller: ON Semiconductor

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Technische Details FDD9511L-F085 ON Semiconductor

Description: MOSFET P-CH 40V 25A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V, Power Dissipation (Max): 48.4W (Tj), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

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FDD9511L-F085 Hersteller : ON Semiconductor fdd9511l-f085-d.pdf Trans MOSFET P-CH 40V 25A Automotive 3-Pin(2+Tab) DPAK T/R
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FDD9511L-F085 FDD9511L-F085 Hersteller : onsemi fdd9511l-f085-d.pdf Description: MOSFET P-CH 40V 25A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V
Power Dissipation (Max): 48.4W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FDD9511L-F085 FDD9511L-F085 Hersteller : onsemi FDD9511L_F085_D-2312502.pdf MOSFET 40V P-Chnl Power Trench Mosfet
Produkt ist nicht verfügbar