FDG1024NZ onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 20V 1.2A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
| 9000+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDG1024NZ onsemi
Description: MOSFET 2N-CH 20V 1.2A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.2A, Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V, Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Part Status: Active.
Weitere Produktangebote FDG1024NZ nach Preis ab 0.33 EUR bis 1.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDG1024NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FDG1024NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FDG1024NZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 1.2A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active |
auf Bestellung 10076 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||||
 |
FDG1024NZ | Hersteller : onsemi / Fairchild |
MOSFET Dual PT4 N 20/8V |
auf Bestellung 13621 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||||
 |
FDG1024NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
 |
FDG1024NZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.2A On-state resistance: 389mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.36W Polarisation: unipolar Gate charge: 2.6nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
FDG1024NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 1.2A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
FDG1024NZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1.2A On-state resistance: 389mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.36W Polarisation: unipolar Gate charge: 2.6nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |