FDG6301N onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Description: MOSFET 2N-CH 25V 0.22A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 70748 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.32 EUR |
9000+ | 0.3 EUR |
30000+ | 0.29 EUR |
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Technische Details FDG6301N onsemi
Description: ONSEMI - FDG6301N - Dual-MOSFET, n-Kanal, 25 V, 220 mA, 4 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 220mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 25V, euEccn: NLR, Bauform - Transistor: SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 4ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 300mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote FDG6301N nach Preis ab 0.22 EUR bis 1.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDG6301N | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 7Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Gate charge: 0.4nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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FDG6301N | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 7Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Gate charge: 0.4nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V |
auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6301N | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 0.22A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) |
auf Bestellung 70759 Stücke: Lieferzeit 21-28 Tag (e) |
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FDG6301N | Hersteller : onsemi / Fairchild | MOSFET SC70-6 N-CH 25V |
auf Bestellung 98769 Stücke: Lieferzeit 14-28 Tag (e) |
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FDG6301N | Hersteller : ONSEMI |
Description: ONSEMI - FDG6301N - Dual-MOSFET, n-Kanal, 25 V, 220 mA, 4 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 220mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: SC-70 Anzahl der Pins: 6Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 300mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5992 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6301N | Hersteller : ONSEMI |
Description: ONSEMI - FDG6301N - Dual-MOSFET, n-Kanal, 25 V, 220 mA, 4 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 220mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 25V euEccn: NLR Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 300mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6620 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6301N | Hersteller : ON Semiconductor | Trans MOSFET N-CH 25V 0.22A 6-Pin SC-88 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6301N | Hersteller : ON Semiconductor | Trans MOSFET N-CH 25V 0.22A 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |