Technische Details FDG6332C-F085 onsemi / Fairchild
Description: MOSFET N/P-CH 20V 0.7A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA, Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Part Status: Obsolete, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDG6332C-F085
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FDG6332C-F085 | Hersteller : ON Semiconductor |
 Trans MOSFET N/P-CH 20V 0.7A/0.6A Automotive 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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FDG6332C-F085 | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 0.7A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |