FDH047AN08A0

FDH047AN08A0

FDH047AN08A0

Hersteller: ON Semiconductor
Trans MOSFET N-CH 75V 15A 3-Pin(3+Tab) TO-247 Tube
fdh047an08a0-d.pdf
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Technische Details FDH047AN08A0

Description: POWER FIELD-EFFECT TRANSISTOR, 8, Manufacturer: Fairchild Semiconductor, Package / Case: TO-247-3, Supplier Device Package: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 310W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 75V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Bulk.

Preis FDH047AN08A0 ab 0 EUR bis 0 EUR

FDH047AN08A0
Hersteller: ONSEMI
Material: FDH047AN08A0 THT N channel transistors
FDH047AN08A0.pdf FDH047AN08A0-D.PDF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDH047AN08A0
Hersteller: ONSEMI
Material: FDH047AN08A0 THT N channel transistors
FDH047AN08A0.pdf FDH047AN08A0-D.PDF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDH047AN08A0
FDH047AN08A0
Hersteller: ON Semiconductor / Fairchild
MOSFET N-Channel PowerTrenc h MOSFET
FDH047AN08A0_D-2312602.pdf
auf Bestellung 385 Stücke
Lieferzeit 14-28 Tag (e)
FDH047AN08A0
Hersteller: ON Semiconductor
FET 80V 4.7 MOHM TO247
FDH047AN08A0.pdf FDH047AN08A0-D.PDF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
FDH047AN08A0
Hersteller: Rochester Electronics, LLC
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Manufacturer: Fairchild Semiconductor
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 310W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
FDH047AN08A0-D.PDF
auf Bestellung 450 Stücke
Lieferzeit 21-28 Tag (e)
FDH047AN08A0
FDH047AN08A0
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 75V 80A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 310W
FDH047AN08A0.pdf
auf Bestellung 881 Stücke
Lieferzeit 21-28 Tag (e)