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FDM3622

FDM3622 onsemi / Fairchild

FDM3622_D-2312484.pdf Hersteller: onsemi / Fairchild
MOSFET 100V N-Ch PowerTrench MOSFET
auf Bestellung 45 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.11 EUR
15+ 3.69 EUR
100+ 2.89 EUR
500+ 2.37 EUR
1000+ 1.94 EUR
3000+ 1.74 EUR
Mindestbestellmenge: 13
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Technische Details FDM3622 onsemi / Fairchild

Description: MOSFET N-CH 100V 4.4A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.4A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V.

Weitere Produktangebote FDM3622 nach Preis ab 4.37 EUR bis 4.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDM3622 FDM3622 Hersteller : onsemi fdm3622-d.pdf Description: MOSFET N-CH 100V 4.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
Mindestbestellmenge: 6
FDM3622 FDM3622 Hersteller : ON Semiconductor fdm3622jp-d.pdf Trans MOSFET N-CH 100V 4.4A 8-Pin WDFN EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
FDM3622 Hersteller : ONSEMI fdm3622-d.pdf FAIR-S-A0002365655-1.pdf?t.download=true&u=5oefqw FDM3622 SMD N channel transistors
Produkt ist nicht verfügbar
FDM3622 FDM3622 Hersteller : onsemi fdm3622-d.pdf Description: MOSFET N-CH 100V 4.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Produkt ist nicht verfügbar
FDM3622 Hersteller : Fairchild Semiconductor FAIR-S-A0002365655-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Produkt ist nicht verfügbar