FDMA2002NZ onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.88 EUR |
| 6000+ | 0.84 EUR |
| 9000+ | 0.8 EUR |
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Technische Details FDMA2002NZ onsemi
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 650mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V, Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2).
Weitere Produktangebote FDMA2002NZ nach Preis ab 0.6 EUR bis 2.13 EUR
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FDMA2002NZ | Hersteller : ON Semiconductor |
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auf Bestellung 825 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMA2002NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 2.9A 6-Pin WDFN EP T/R |
auf Bestellung 825 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMA2002NZ | Hersteller : onsemi / Fairchild |
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FDMA2002NZ | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
auf Bestellung 31971 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMA2002NZ | Hersteller : ON Semiconductor / Fairchild |
MOSFET 30V Dual N-Channel PowerTrench MOSFET |
auf Bestellung 28238 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMA2002NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 2.9A 6-Pin WDFN EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMA2002NZ | Hersteller : ONSEMI |
FDMA2002NZ Multi channel transistors |
Produkt ist nicht verfügbar |
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FDMA2002NZ | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 2.9A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |