FDMA7672 onsemi / Fairchild
auf Bestellung 3000 Stücke:
Lieferzeit 738-752 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.65 EUR |
| 22+ | 2.38 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.21 EUR |
| 3000+ | 1.13 EUR |
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Technische Details FDMA7672 onsemi / Fairchild
Description: MOSFET N-CH 30V 9A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V.
Weitere Produktangebote FDMA7672 nach Preis ab 1.23 EUR bis 2.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMA7672 | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 9A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
auf Bestellung 2498 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMA7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 6-Pin WDFN EP T/R |
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| FDMA7672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET Mounting: SMD Pulsed drain current: 24A Power dissipation: 2.4W Gate charge: 13nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: MicroFET On-state resistance: 32mΩ Anzahl je Verpackung: 1 Stücke |
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FDMA7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMA7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 6-Pin WDFN EP T/R |
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FDMA7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMA7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 9A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMA7672 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 9A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
Produkt ist nicht verfügbar |
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| FDMA7672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET Mounting: SMD Pulsed drain current: 24A Power dissipation: 2.4W Gate charge: 13nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: MicroFET On-state resistance: 32mΩ |
Produkt ist nicht verfügbar |