FDMB2308PZ onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
Description: MOSFET 2P-CH 6MLP
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.28 EUR |
6000+ | 2.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMB2308PZ onsemi
Description: ONSEMI - FDMB2308PZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 7 A, 7 A, 0.027 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.027ohm, Verlustleistung, p-Kanal: 2.2W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: MLP, Anzahl der Pins: 6Pins, Produktpalette: PowerTrench Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 2.2W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote FDMB2308PZ nach Preis ab 2.13 EUR bis 4.99 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMB2308PZ | Hersteller : onsemi / Fairchild | MOSFET Dual Com Drain -20V P-Channel Pwr Trench |
auf Bestellung 5426 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMB2308PZ | Hersteller : onsemi |
Description: MOSFET 2P-CH 6MLP Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MLP (2x3) Part Status: Active |
auf Bestellung 17977 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMB2308PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDMB2308PZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 7 A, 7 A, 0.027 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.027ohm Verlustleistung, p-Kanal: 2.2W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: MLP Anzahl der Pins: 6Pins Produktpalette: PowerTrench Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2.2W Betriebstemperatur, max.: 150°C |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMB2308PZ | Hersteller : ONSEMI |
Description: ONSEMI - FDMB2308PZ - Dual-MOSFET, p-Kanal, 20 V, 20 V, 7 A, 7 A, 0.027 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.027ohm Verlustleistung, p-Kanal: 2.2W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: MLP Anzahl der Pins: 6Pins Produktpalette: PowerTrench Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2.2W Betriebstemperatur, max.: 150°C |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMB2308PZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6 Mounting: SMD Pulsed drain current: -30A Power dissipation: 2.2W Gate charge: 30nC Polarisation: unipolar Drain current: -7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Kind of package: reel; tape Semiconductor structure: common drain Case: WDFN6 Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMB2308PZ | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6 Mounting: SMD Pulsed drain current: -30A Power dissipation: 2.2W Gate charge: 30nC Polarisation: unipolar Drain current: -7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Kind of package: reel; tape Semiconductor structure: common drain Case: WDFN6 Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |