FDMB3800N onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMB3800N onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 750mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP, MicroFET (3x1.9), Part Status: Active.
Weitere Produktangebote FDMB3800N nach Preis ab 1.23 EUR bis 3.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMB3800N | Hersteller : onsemi / Fairchild | MOSFET 30V Dual N-Channel PwrTrch MOSFET |
auf Bestellung 16494 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMB3800N | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 8MLP MICROFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP, MicroFET (3x1.9) Part Status: Active |
auf Bestellung 5348 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMB3800N | Hersteller : FAIRCHILD |
auf Bestellung 129 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMB3800N | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 4.8A 8-Pin WDFN EP T/R |
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FDMB3800N | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W Kind of package: reel; tape Pulsed drain current: 9A Power dissipation: 1.6W Gate charge: 5.6nC Polarisation: unipolar Drain current: 4.8A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: MicroFET On-state resistance: 61mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMB3800N | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W Kind of package: reel; tape Pulsed drain current: 9A Power dissipation: 1.6W Gate charge: 5.6nC Polarisation: unipolar Drain current: 4.8A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: MicroFET On-state resistance: 61mΩ Mounting: SMD |
Produkt ist nicht verfügbar |