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FDMB3800N

FDMB3800N onsemi


FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.27 EUR
Mindestbestellmenge: 3000
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Technische Details FDMB3800N onsemi

Description: MOSFET 2N-CH 30V 8MLP MICROFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 750mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.8A, Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP, MicroFET (3x1.9), Part Status: Active.

Weitere Produktangebote FDMB3800N nach Preis ab 1.23 EUR bis 3.07 EUR

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FDMB3800N FDMB3800N Hersteller : onsemi / Fairchild FDMB3800N_D-2312359.pdf MOSFET 30V Dual N-Channel PwrTrch MOSFET
auf Bestellung 16494 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.99 EUR
20+ 2.6 EUR
100+ 2.03 EUR
500+ 1.71 EUR
1000+ 1.38 EUR
3000+ 1.29 EUR
6000+ 1.23 EUR
Mindestbestellmenge: 18
FDMB3800N FDMB3800N Hersteller : onsemi FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
auf Bestellung 5348 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.07 EUR
11+ 2.51 EUR
100+ 1.95 EUR
500+ 1.66 EUR
1000+ 1.35 EUR
Mindestbestellmenge: 9
FDMB3800N Hersteller : FAIRCHILD FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw
auf Bestellung 129 Stücke:
Lieferzeit 21-28 Tag (e)
FDMB3800N FDMB3800N Hersteller : ON Semiconductor fdmb3800n-d.pdf Trans MOSFET N-CH 30V 4.8A 8-Pin WDFN EP T/R
Produkt ist nicht verfügbar
FDMB3800N Hersteller : ONSEMI FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Kind of package: reel; tape
Pulsed drain current: 9A
Power dissipation: 1.6W
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 4.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: MicroFET
On-state resistance: 61mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB3800N Hersteller : ONSEMI FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Kind of package: reel; tape
Pulsed drain current: 9A
Power dissipation: 1.6W
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 4.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: MicroFET
On-state resistance: 61mΩ
Mounting: SMD
Produkt ist nicht verfügbar