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FDMC007N30D onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 46A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.92 EUR |
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Technische Details FDMC007N30D onsemi
Description: MOSFET 2N-CH 30V 46A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 46A, Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Weitere Produktangebote FDMC007N30D nach Preis ab 0.88 EUR bis 2.25 EUR
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FDMC007N30D | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 46A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 5796 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC007N30D | Hersteller : onsemi / Fairchild |
MOSFET Dual N-Channel PowerTrench MOSFET |
auf Bestellung 1753 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMC007N30D | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 10A/16A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC007N30D | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 10A/16A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC007N30D | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 18/29A Power dissipation: 1.9/2.5W Case: WDFN8 Gate-source voltage: ±12/±12V On-state resistance: 16.3/9mΩ Mounting: SMD Gate charge: 17/34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC007N30D | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 18/29A Power dissipation: 1.9/2.5W Case: WDFN8 Gate-source voltage: ±12/±12V On-state resistance: 16.3/9mΩ Mounting: SMD Gate charge: 17/34nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |