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FDMC010N08C

FDMC010N08C onsemi


fdmc010n08c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/51A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
auf Bestellung 29400 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.44 EUR
6000+ 3.3 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details FDMC010N08C onsemi

Description: MOSFET N-CH 80V 11A/51A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V, Power Dissipation (Max): 2.4W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V.

Weitere Produktangebote FDMC010N08C nach Preis ab 3.65 EUR bis 7.15 EUR

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FDMC010N08C FDMC010N08C Hersteller : onsemi fdmc010n08c-d.pdf Description: MOSFET N-CH 80V 11A/51A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
auf Bestellung 29400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.07 EUR
10+ 5.93 EUR
100+ 4.8 EUR
500+ 4.27 EUR
1000+ 3.65 EUR
Mindestbestellmenge: 4
FDMC010N08C FDMC010N08C Hersteller : onsemi FDMC010N08C_D-2312236.pdf MOSFET PTNG 80/20V IN 51A 10 mOhm
auf Bestellung 5974 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.15 EUR
10+ 6.03 EUR
25+ 5.54 EUR
100+ 4.86 EUR
250+ 4.6 EUR
500+ 4.32 EUR
1000+ 3.69 EUR
Mindestbestellmenge: 8
FDMC010N08C Hersteller : ON Semiconductor fdmc010n08c-d.pdf
auf Bestellung 2705 Stücke:
Lieferzeit 21-28 Tag (e)
FDMC010N08C Hersteller : ONSEMI 2619997.pdf Description: ONSEMI - FDMC010N08C - FET 80V 10.0 MOHM IN 3X3CLIP / REEL 65AC4694
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
FDMC010N08C FDMC010N08C Hersteller : ON Semiconductor fdmc010n08c-d.pdf Trans MOSFET N-CH 80V 11A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMC010N08C Hersteller : ONSEMI fdmc010n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC010N08C Hersteller : ONSEMI fdmc010n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar