FDMC010N08C onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/51A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
Description: MOSFET N-CH 80V 11A/51A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
auf Bestellung 29400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.44 EUR |
6000+ | 3.3 EUR |
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Technische Details FDMC010N08C onsemi
Description: MOSFET N-CH 80V 11A/51A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V, Power Dissipation (Max): 2.4W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V.
Weitere Produktangebote FDMC010N08C nach Preis ab 3.65 EUR bis 7.15 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FDMC010N08C | Hersteller : onsemi |
Description: MOSFET N-CH 80V 11A/51A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V Power Dissipation (Max): 2.4W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V |
auf Bestellung 29400 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC010N08C | Hersteller : onsemi | MOSFET PTNG 80/20V IN 51A 10 mOhm |
auf Bestellung 5974 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMC010N08C | Hersteller : ON Semiconductor |
auf Bestellung 2705 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC010N08C | Hersteller : ONSEMI |
Description: ONSEMI - FDMC010N08C - FET 80V 10.0 MOHM IN 3X3CLIP / REEL 65AC4694 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC010N08C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 11A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC010N08C | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 32A Pulsed drain current: 206A Power dissipation: 52W Case: Power33 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC010N08C | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 32A Pulsed drain current: 206A Power dissipation: 52W Case: Power33 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |