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FDMC2610

FDMC2610 onsemi

fdmc2610-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
auf Bestellung 560 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.69 EUR
10+ 4.72 EUR
100+ 3.76 EUR
500+ 3.18 EUR
Mindestbestellmenge: 5
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Technische Details FDMC2610 onsemi

Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.

Weitere Produktangebote FDMC2610 nach Preis ab 2.56 EUR bis 5.72 EUR

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FDMC2610 FDMC2610 Hersteller : onsemi / Fairchild FDMC2610_D-2312573.pdf MOSFET 200V N-Ch UltraFET PowerTrench MOSFET
auf Bestellung 1847 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.72 EUR
11+ 4.76 EUR
100+ 4.16 EUR
250+ 3.98 EUR
500+ 3.48 EUR
1000+ 2.89 EUR
3000+ 2.56 EUR
Mindestbestellmenge: 10
FDMC2610 FDMC2610 Hersteller : ON Semiconductor fdmc2610-d.pdf Trans MOSFET N-CH Si 200V 2.2A 8-Pin WDFN EP T/R
Produkt ist nicht verfügbar
FDMC2610 FDMC2610 Hersteller : ON Semiconductor fdmc2610-d.pdf Trans MOSFET N-CH Si 200V 2.2A 8-Pin WDFN EP T/R
Produkt ist nicht verfügbar
FDMC2610 Hersteller : ONSEMI fdmc2610-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC2610 FDMC2610 Hersteller : onsemi fdmc2610-d.pdf Description: MOSFET N-CH 200V 2.2A/9.5A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Produkt ist nicht verfügbar
FDMC2610 Hersteller : ONSEMI fdmc2610-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar