FDMC7660DC onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 30A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22A, 10V
Power Dissipation (Max): 3W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5170 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.85 EUR |
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Technische Details FDMC7660DC onsemi
Description: MOSFET N-CH 30V 30A/40A DLCOOL33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22A, 10V, Power Dissipation (Max): 3W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: Dual Cool ™ 33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5170 pF @ 15 V.
Weitere Produktangebote FDMC7660DC nach Preis ab 1.88 EUR bis 4.19 EUR
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FDMC7660DC | Hersteller : onsemi |
Description: MOSFET N-CH 30V 30A/40A DLCOOL33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 22A, 10V Power Dissipation (Max): 3W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5170 pF @ 15 V |
auf Bestellung 6214 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMC7660DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 78W; PQFN8 Kind of package: reel; tape Power dissipation: 78W Polarisation: unipolar Gate charge: 76nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD Case: PQFN8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC7660DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 78W; PQFN8 Kind of package: reel; tape Power dissipation: 78W Polarisation: unipolar Gate charge: 76nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD Case: PQFN8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |