FDMC7672 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 16.9A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 16.9A, 10V
Power Dissipation (Max): 2.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.03 EUR |
| 6000+ | 0.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC7672 onsemi
Description: MOSFET N-CH 30V 16.9A/20A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 16.9A, 10V, Power Dissipation (Max): 2.3W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 15 V.
Weitere Produktangebote FDMC7672 nach Preis ab 1 EUR bis 2.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC7672 | Hersteller : onsemi / Fairchild |
MOSFET N-Chan 30/20V PowerTrench |
auf Bestellung 4976 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
FDMC7672 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 16.9A/20A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 16.9A, 10V Power Dissipation (Max): 2.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 15 V |
auf Bestellung 11181 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDMC7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 16.9A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
FDMC7672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 16.9A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMC7672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMC7672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |