FDMC7672S onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 14.8A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
Description: MOSFET N-CH 30V 14.8A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.05 EUR |
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Technische Details FDMC7672S onsemi
Description: MOSFET N-CH 30V 14.8A/18A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 14.8A, 10V, Power Dissipation (Max): 2.3W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V.
Weitere Produktangebote FDMC7672S nach Preis ab 1.07 EUR bis 2.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FDMC7672S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 14.8A/18A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14.8A, 10V Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V |
auf Bestellung 3690 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC7672S | Hersteller : onsemi / Fairchild | MOSFET 30V/20A N-Chan PowerTrench SyncFET |
auf Bestellung 688 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMC7672S | Hersteller : FAIRCHILD | QFN |
auf Bestellung 2044 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC7672S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 36W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC7672S | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 14.8A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC7672S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 36W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |