FDMC8010DC onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 37A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V
FET Feature: Standard
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.24 EUR |
| 6000+ | 1.18 EUR |
| 9000+ | 1.12 EUR |
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Technische Details FDMC8010DC onsemi
Description: MOSFET N-CH 30V 37A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V, FET Feature: Standard, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V.
Weitere Produktangebote FDMC8010DC nach Preis ab 1.19 EUR bis 3.09 EUR
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FDMC8010DC | Hersteller : onsemi |
Description: MOSFET N-CH 30V 37A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V FET Feature: Standard Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V |
auf Bestellung 11001 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC8010DC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 37A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC8010DC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 37A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC8010DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 99A Pulsed drain current: 788A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 1.89mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC8010DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 99A Pulsed drain current: 788A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 1.89mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |