FDMC8097AC onsemi / Fairchild
auf Bestellung 1560 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 10.09 EUR |
| 10+ | 8.48 EUR |
| 100+ | 6.84 EUR |
| 500+ | 6.08 EUR |
| 1000+ | 5.07 EUR |
| 3000+ | 4.84 EUR |
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Technische Details FDMC8097AC onsemi / Fairchild
Description: MOSFET N/P-CH 150V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V, Rds On (Max) @ Id, Vgs: 155mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power33 (3x3), Part Status: Active.
Weitere Produktangebote FDMC8097AC nach Preis ab 5.89 EUR bis 11.15 EUR
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FDMC8097AC | Hersteller : onsemi |
 Description: MOSFET N/P-CH 150VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
auf Bestellung 1888 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC8097AC | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 150V 2.4A/0.9A 8-Pin Power 33 EP T/R |
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| FDMC8097AC | Hersteller : ONSEMI |
FDMC8097AC Multi channel transistors |
Produkt ist nicht verfügbar |
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FDMC8097AC | Hersteller : onsemi |
Description: MOSFET N/P-CH 150V Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Power33 (3x3) Part Status: Active |
Produkt ist nicht verfügbar |