FDMC8200S ON Semiconductor
auf Bestellung 2678 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 146+ | 1.09 EUR |
| 147+ | 1.04 EUR |
| 168+ | 0.88 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC8200S ON Semiconductor
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Weitere Produktangebote FDMC8200S nach Preis ab 0.59 EUR bis 2.73 EUR
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FDMC8200S | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
auf Bestellung 2678 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8200S | Hersteller : onsemi / Fairchild |
MOSFET 30V Dual N-Channel PowerTrench MOSFET |
auf Bestellung 6616 Stücke: Lieferzeit 14-28 Tag (e) |
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FSC 1121+ MLP |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 18A/13A 8-Pin Power 33 T/R |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
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FDMC8200S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 6A/8.5A 8-Pin Power 33 T/R |
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| FDMC8200S | Hersteller : ONSEMI |
FDMC8200S Multi channel transistors |
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FDMC8200S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
Produkt ist nicht verfügbar |
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FDMC8200S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
Produkt ist nicht verfügbar |