FDMC8878 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 97+ | 1.64 EUR |
| 112+ | 1.37 EUR |
| 137+ | 1.07 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.73 EUR |
| 3000+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC8878 ON Semiconductor
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V, Power Dissipation (Max): 2.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V.
Weitere Produktangebote FDMC8878 nach Preis ab 1.38 EUR bis 3.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMC8878 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 9.6A 8-Pin WDFN EP T/R |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDMC8878 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 5019 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDMC8878 | Hersteller : onsemi / Fairchild |
MOSFET 30V N-CH PowerTrench MOSFET |
auf Bestellung 25534 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
FDMC8878 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 9.6A 8-Pin WDFN EP T/R |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
FDMC8878 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
| FDMC8878 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 16.5A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: WDFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMC8878 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 16.5A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |