FDMC8884

FDMC8884 Fairchild Semiconductor


FAIR-S-A0002365668-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: 9A, 30V, 0.019OHM, N-CHANNEL POW
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
auf Bestellung 330020 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
919+0.78 EUR
Mindestbestellmenge: 919
Produktrezensionen
Produktbewertung abgeben

Technische Details FDMC8884 Fairchild Semiconductor

Description: 9A, 30V, 0.019OHM, N-CHANNEL POW, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Power Dissipation (Max): 2.3W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V.

Weitere Produktangebote FDMC8884 nach Preis ab 0.78 EUR bis 0.78 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDMC8884 FDMC8884 Hersteller : onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
auf Bestellung 24916 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
919+0.78 EUR
Mindestbestellmenge: 919
FDMC8884 FDMC8884 Hersteller : ONSEMI ONSM-S-A0003590249-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - FDMC8884 - MOSFET, N CH, 30V, 15A, MLP 3.3X3.3
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 110527 Stücke:
Lieferzeit 14-21 Tag (e)
FDMC8884 FDMC8884 Hersteller : ON Semiconductor fdmc8884-d.pdf Trans MOSFET N-CH Si 30V 9A 8-Pin WDFN EP T/R
Produkt ist nicht verfügbar
FDMC8884 FDMC8884 Hersteller : onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Produkt ist nicht verfügbar
FDMC8884 FDMC8884 Hersteller : onsemi / Fairchild FDMC8884-1305636.pdf MOSFET 30V N-Channel Power Trench
Produkt ist nicht verfügbar