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FDMD8560L

FDMD8560L onsemi


fdmd8560l-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 46V 22A POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A, 93A
Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Obsolete
auf Bestellung 2932 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.83 EUR
10+ 8.83 EUR
100+ 7.24 EUR
500+ 6.16 EUR
1000+ 5.2 EUR
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Technische Details FDMD8560L onsemi

Description: MOSFET 2N-CH 46V 22A POWER, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 22A, 93A, Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V, Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Obsolete.

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FDMD8560L FDMD8560L Hersteller : ON Semiconductor / Fairchild FDMD8560L_D-2312307.pdf MOSFET 60V Dual N-Channel PowerTrench MOSFET
auf Bestellung 2265 Stücke:
Lieferzeit 14-28 Tag (e)
FDMD8560L Hersteller : ON Semiconductor fdmd8560l-d.pdf
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
FDMD8560L Hersteller : ONSEMI fdmd8560l-d.pdf Description: ONSEMI - FDMD8560L - MOSFET, DUAL N-CH, 60V, 93A, PQFN-10
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3489 Stücke:
Lieferzeit 14-21 Tag (e)
FDMD8560L FDMD8560L Hersteller : onsemi fdmd8560l-d.pdf Description: MOSFET 2N-CH 46V 22A POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A, 93A
Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Obsolete
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