FDME510PZT onsemi
Hersteller: onsemiDescription: MOSFET P-CH 20V 6A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.81 EUR |
| 10000+ | 0.77 EUR |
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Technische Details FDME510PZT onsemi
Description: MOSFET P-CH 20V 6A MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: MicroFet 1.6x1.6 Thin, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V.
Weitere Produktangebote FDME510PZT nach Preis ab 0.82 EUR bis 2.05 EUR
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FDME510PZT | Hersteller : onsemi / Fairchild |
MOSFET -20V P-Channel PowerTrench |
auf Bestellung 4314 Stücke: Lieferzeit 14-28 Tag (e) |
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FDME510PZT | Hersteller : onsemi |
Description: MOSFET P-CH 20V 6A MICROFET Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: MicroFet 1.6x1.6 Thin Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V |
auf Bestellung 35462 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDME510PZT | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET Power dissipation: 2.1W Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.1Ω Drain current: -6A Drain-source voltage: -20V Kind of package: reel; tape Case: MicroFET Gate charge: 22nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDME510PZT | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET Power dissipation: 2.1W Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.1Ω Drain current: -6A Drain-source voltage: -20V Kind of package: reel; tape Case: MicroFET Gate charge: 22nC Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A |
Produkt ist nicht verfügbar |