FDMQ86530L onsemi
Hersteller: onsemiDescription: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
auf Bestellung 2332 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.33 EUR |
| 10+ | 6.15 EUR |
| 100+ | 4.98 EUR |
| 500+ | 4.42 EUR |
| 1000+ | 3.79 EUR |
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Technische Details FDMQ86530L onsemi
Description: MOSFET 4N-CH 60V 8A 12MLP, Packaging: Tape & Reel (TR), Package / Case: 12-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V, Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 12-MLP (5x4.5).
Weitere Produktangebote FDMQ86530L nach Preis ab 3.9 EUR bis 7.44 EUR
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FDMQ86530L | Hersteller : onsemi / Fairchild |
MOSFET 60V N-Channel PowerTrench MOSFET |
auf Bestellung 3258 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMQ86530L | Hersteller : onsemi |
Description: MOSFET 4N-CH 60V 8A 12MLP Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-MLP (5x4.5) |
auf Bestellung 860 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMQ86530L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 8A 12-Pin MLP EP T/R |
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FDMQ86530L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 8A 12-Pin MLP EP T/R |
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| FDMQ86530L | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12 Type of transistor: N-MOSFET x4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 50A Power dissipation: 22W Case: MLP12 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level; MOSFET H-Bridge Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| FDMQ86530L | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12 Type of transistor: N-MOSFET x4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 50A Power dissipation: 22W Case: MLP12 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level; MOSFET H-Bridge |
Produkt ist nicht verfügbar |