FDMS001N025DSD onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 25V 8PQFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 268+ | 2.72 EUR |
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Technische Details FDMS001N025DSD onsemi
Description: MOSFET 2N-CH 25V 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete.
Weitere Produktangebote FDMS001N025DSD nach Preis ab 3.26 EUR bis 3.26 EUR
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FDMS001N025DSD | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete |
auf Bestellung 34409 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMS001N025DSD | Hersteller : ON Semiconductor |
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auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDMS001N025DSD | Hersteller : ONSEMI |
Description: ONSEMI - FDMS001N025DSD - Dual-MOSFET, n-Kanal tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) Kanaltyp: n-Kanal euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Bauform - Transistor: TO-263AB Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: PW Series SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS001N025DSD | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete |
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