FDMS0308AS

FDMS0308AS onsemi / Fairchild


FDMS0308AS_D-2312640.pdf Hersteller: onsemi / Fairchild
MOSFET N-Channel PowerTrench SyncFET 30V, 49A, 2.8mohm
auf Bestellung 12664 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.1 EUR
29+ 1.85 EUR
100+ 1.45 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
3000+ 0.93 EUR
6000+ 0.9 EUR
Mindestbestellmenge: 25
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Technische Details FDMS0308AS onsemi / Fairchild

Description: MOSFET N-CH 30V 24A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V.

Weitere Produktangebote FDMS0308AS nach Preis ab 1.01 EUR bis 2.24 EUR

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FDMS0308AS FDMS0308AS Hersteller : onsemi fdms0308as-d.pdf Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 2978 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.24 EUR
14+ 1.99 EUR
100+ 1.55 EUR
500+ 1.28 EUR
1000+ 1.01 EUR
Mindestbestellmenge: 12
FDMS0308AS FDMS0308AS Hersteller : ONSEMI FAIR-S-A0002365438-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDMS0308AS - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
FDMS0308AS Hersteller : FAIRCHILD fdms0308as-d.pdf QFN
auf Bestellung 55 Stücke:
Lieferzeit 21-28 Tag (e)
FDMS0308AS FDMS0308AS Hersteller : ON Semiconductor 3666362692940633fdms0308as.pdf Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS0308AS Hersteller : ONSEMI fdms0308as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS0308AS FDMS0308AS Hersteller : onsemi fdms0308as-d.pdf Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Produkt ist nicht verfügbar
FDMS0308AS Hersteller : ONSEMI fdms0308as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar