FDMS3604S

FDMS3604S onsemi / Fairchild


FDMS3604S_D-2312521.pdf Hersteller: onsemi / Fairchild
MOSFET PowerTrench Power Stage
auf Bestellung 384 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.59 EUR
17+ 3.22 EUR
100+ 2.51 EUR
500+ 2.06 EUR
1000+ 1.57 EUR
3000+ 1.49 EUR
6000+ 1.41 EUR
Mindestbestellmenge: 15
Produktrezensionen
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Technische Details FDMS3604S onsemi / Fairchild

Description: MOSFET 2N-CH 30V 13A/23A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 23A, Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56.

Weitere Produktangebote FDMS3604S

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FDMS3604S FDMS3604S Hersteller : ON Semiconductor fdms3604s-d.pdf Trans MOSFET N-CH Si 30V 13A/23A 8-Pin Power 56 EP T/R
Produkt ist nicht verfügbar
FDMS3604S FDMS3604S Hersteller : ON Semiconductor fdms3604s-d.pdf Trans MOSFET N-CH Si 30V 13A/23A 8-Pin Power 56 EP T/R
Produkt ist nicht verfügbar
FDMS3604S Hersteller : ONSEMI FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: asymmetric
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS3604S FDMS3604S Hersteller : onsemi FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Produkt ist nicht verfügbar
FDMS3604S FDMS3604S Hersteller : onsemi FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Produkt ist nicht verfügbar
FDMS3604S Hersteller : ONSEMI FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar