FDMS4D4N08C onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 123A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6), Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.78 EUR |
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Technische Details FDMS4D4N08C onsemi
Description: MOSFET N-CH 80V 123A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 123A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V.
Weitere Produktangebote FDMS4D4N08C nach Preis ab 2.78 EUR bis 6.21 EUR
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FDMS4D4N08C | Hersteller : onsemi |
Description: MOSFET N-CH 80V 123A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 44A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6), Power56 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 40 V |
auf Bestellung 6617 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS4D4N08C | Hersteller : ONSEMI |
Description: ONSEMI - FDMS4D4N08C - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
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| FDMS4D4N08C | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 78A Pulsed drain current: 498A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| FDMS4D4N08C | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 78A Pulsed drain current: 498A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |