FDMS4D5N08LC onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 17A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 210µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Description: MOSFET N-CH 80V 17A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 210µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.99 EUR |
6000+ | 2.88 EUR |
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Technische Details FDMS4D5N08LC onsemi
Description: MOSFET N-CH 80V 17A/116A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V, Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 210µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V.
Weitere Produktangebote FDMS4D5N08LC nach Preis ab 2.99 EUR bis 6.66 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMS4D5N08LC | Hersteller : onsemi |
Description: MOSFET N-CH 80V 17A/116A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 210µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V |
auf Bestellung 8180 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS4D5N08LC | Hersteller : onsemi | MOSFET 80V 116A 4.2mOhm |
auf Bestellung 256 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS4D5N08LC | Hersteller : ON Semiconductor |
auf Bestellung 5892 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS4D5N08LC | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 17A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS4D5N08LC | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 17A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS4D5N08LC | Hersteller : ON Semiconductor | Trans MOSFET N-CH 80V 17A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |