FDMS7660 ON Semiconductor
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 83+ | 1.92 EUR |
| 89+ | 1.71 EUR |
| 90+ | 1.64 EUR |
| 102+ | 1.38 EUR |
| 250+ | 1.12 EUR |
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Technische Details FDMS7660 ON Semiconductor
Description: MOSFET N-CH 30V 25A/42A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5565 pF @ 15 V.
Weitere Produktangebote FDMS7660 nach Preis ab 1.12 EUR bis 4.42 EUR
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FDMS7660 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 25A 8-Pin PQFN EP T/R |
auf Bestellung 343 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS7660 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 25A/42A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5565 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7660 | Hersteller : onsemi / Fairchild |
MOSFET 30/20V Nch Power Trench |
auf Bestellung 3000 Stücke: Lieferzeit 210-224 Tag (e) |
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FDMS7660 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 25A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5565 pF @ 15 V |
auf Bestellung 483 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7660 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 25A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5565 pF @ 15 V |
auf Bestellung 4168 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7660 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 25A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS7660 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 25A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS7660 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 78W; Power56 Kind of package: reel; tape Power dissipation: 78W Polarisation: unipolar Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 42A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS7660 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 25A/42A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5565 pF @ 15 V |
Produkt ist nicht verfügbar |
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| FDMS7660 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 78W; Power56 Kind of package: reel; tape Power dissipation: 78W Polarisation: unipolar Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 42A On-state resistance: 3.7mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |