FDMS7660AS ON Semiconductor
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 101+ | 1.57 EUR |
| 109+ | 1.4 EUR |
| 111+ | 1.33 EUR |
| 123+ | 1.15 EUR |
| 250+ | 1.1 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS7660AS ON Semiconductor
Description: MOSFET N-CH 30V 26A/42A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V.
Weitere Produktangebote FDMS7660AS nach Preis ab 0.76 EUR bis 3.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS7660AS | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R |
auf Bestellung 2848 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDMS7660AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDMS7660AS | Hersteller : onsemi / Fairchild |
MOSFET PT7 30/20V Nch PowerTrench SyncFET |
auf Bestellung 1639 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
FDMS7660AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V |
auf Bestellung 7172 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
|
FDMS7660AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
FDMS7660AS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 26A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMS7660AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56 Polarisation: unipolar Kind of package: reel; tape Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 42A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 83W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMS7660AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56 Polarisation: unipolar Kind of package: reel; tape Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 42A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 83W |
Produkt ist nicht verfügbar |