FDMS7678 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.81 EUR |
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Technische Details FDMS7678 onsemi
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V.
Weitere Produktangebote FDMS7678 nach Preis ab 0.74 EUR bis 2.15 EUR
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FDMS7678 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS7678 | Hersteller : onsemi / Fairchild |
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auf Bestellung 79784 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS7678 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS7678 - Leistungs-MOSFET, n-Kanal, 30 V, 26 A, 0.0047 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 41W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0047ohm |
auf Bestellung 3059 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS7678 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS7678 - Leistungs-MOSFET, n-Kanal, 30 V, 26 A, 0.0047 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 41W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0047ohm |
auf Bestellung 3059 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS7678 | Hersteller : ON Semiconductor |
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FDMS7678 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 17.5A 8-Pin PQFN EP T/R |
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| FDMS7678 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 70A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| FDMS7678 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 70A; 41W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 70A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |