FDMS86101A onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.25 EUR |
| 10+ | 6.09 EUR |
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Technische Details FDMS86101A onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V.
Weitere Produktangebote FDMS86101A nach Preis ab 3.56 EUR bis 7.31 EUR
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Description: ONSEMI - FDMS86101A - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12380 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86101A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R |
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FDMS86101A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R |
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| FDMS86101A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Pulsed drain current: 180A Power dissipation: 104W Gate charge: 58nC Polarisation: unipolar Drain current: 60A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 13.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS86101A | Hersteller : onsemi |
Description: MOSFET N-CH 100V 13A/60A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V |
Produkt ist nicht verfügbar |
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| FDMS86101A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Pulsed drain current: 180A Power dissipation: 104W Gate charge: 58nC Polarisation: unipolar Drain current: 60A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 13.5mΩ |
Produkt ist nicht verfügbar |