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FDMS86202ET120

FDMS86202ET120 onsemi / Fairchild


FDMS86202ET120_D-2312648.pdf Hersteller: onsemi / Fairchild
MOSFET 120V N-Channel Shielded Gate PowerTrench MOSFET
auf Bestellung 2875 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.69 EUR
10+ 12.32 EUR
25+ 11.44 EUR
100+ 9.98 EUR
250+ 9.57 EUR
500+ 8.84 EUR
1000+ 7.59 EUR
Mindestbestellmenge: 4
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Technische Details FDMS86202ET120 onsemi / Fairchild

Description: MOSFET N-CH 120V 13.5/102A PWR56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V.

Weitere Produktangebote FDMS86202ET120

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FDMS86202ET120 FDMS86202ET120 Hersteller : ONSEMI FAIR-S-A0002363668-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FDMS86202ET120 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
FDMS86202ET120 Hersteller : ON Semiconductor fdms86202et120-d.pdf
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
FDMS86202ET120 FDMS86202ET120 Hersteller : ON Semiconductor fdms86202et120jp-d.pdf Trans MOSFET N-CH 120V 13.5A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
FDMS86202ET120 Hersteller : ONSEMI fdms86202et120-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power56
On-state resistance: 13.2mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 538A
Power dissipation: 187W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 120V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86202ET120 FDMS86202ET120 Hersteller : onsemi fdms86202et120-d.pdf Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Produkt ist nicht verfügbar
FDMS86202ET120 FDMS86202ET120 Hersteller : onsemi fdms86202et120-d.pdf Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Produkt ist nicht verfügbar
FDMS86202ET120 Hersteller : ONSEMI fdms86202et120-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: Power56
On-state resistance: 13.2mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 538A
Power dissipation: 187W
Gate charge: 64nC
Polarisation: unipolar
Drain current: 72A
Kind of channel: enhanced
Drain-source voltage: 120V
Produkt ist nicht verfügbar