FDMS8622 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 4.8A/16.5A 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.29 EUR |
| 6000+ | 1.23 EUR |
| 9000+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS8622 onsemi
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V.
Weitere Produktangebote FDMS8622 nach Preis ab 1.24 EUR bis 3.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS8622 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 4.8A/16.5A 8QFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.8A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V |
auf Bestellung 10590 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDMS8622 | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel PowerTrench MOSFET |
auf Bestellung 22251 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
FDMS8622 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS8622 - Leistungs-MOSFET, n-Kanal, 100 V, 16.5 A, 0.045 ohm, PQFN, Oberflächenmontage tariffCode: 85413000 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 16.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 31W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
FDMS8622 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS8622 - Leistungs-MOSFET, n-Kanal, 100 V, 16.5 A, 0.045 ohm, PQFN, Oberflächenmontage tariffCode: 85413000 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 16.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 31W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
FDMS8622 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 4.8A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDMS8622 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 4.8A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
FDMS8622 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 4.8A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMS8622 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 16.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PQFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FDMS8622 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 16.5A On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PQFN8 |
Produkt ist nicht verfügbar |