FDMS86300 ON Semiconductor
auf Bestellung 261000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.98 EUR |
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Produktbewertung abgeben
Technische Details FDMS86300 ON Semiconductor
Description: MOSFET N-CH 80V 19A/80A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V.
Weitere Produktangebote FDMS86300 nach Preis ab 1.25 EUR bis 5.72 EUR
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FDMS86300 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R |
auf Bestellung 2723 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86300 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R |
auf Bestellung 2723 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86300 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 19A/80A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86300 | Hersteller : onsemi / Fairchild | MOSFET 80V N-Channel PowerTrench MOSFET |
auf Bestellung 2579 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS86300 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 19A/80A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3179 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS86300 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86300 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86300 | Hersteller : ONSEMI | FDMS86300 SMD N channel transistors |
Produkt ist nicht verfügbar |