FDMS86310 ON Semiconductor
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.74 EUR |
| 6000+ | 1.62 EUR |
| 9000+ | 1.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS86310 ON Semiconductor
Description: MOSFET N-CH 80V 17A/50A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V.
Weitere Produktangebote FDMS86310 nach Preis ab 1.5 EUR bis 6.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FDMS86310 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS86310 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FDMS86310 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 17A/50A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V |
auf Bestellung 5650 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
|
FDMS86310 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FDMS86310 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 17A/50A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V |
auf Bestellung 5650 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
FDMS86310 | Hersteller : onsemi / Fairchild |
MOSFET 80V N-Channel PowerTrench MOSFET |
auf Bestellung 5423 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
FDMS86310 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
FDMS86310 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FDMS86310 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FDMS86310 | Hersteller : ONSEMI |
FDMS86310 SMD N channel transistors |
Produkt ist nicht verfügbar |