FDMS86350ET80 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 1489 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 14.48 EUR |
| 10+ | 12.42 EUR |
| 100+ | 10.35 EUR |
| 500+ | 9.13 EUR |
| 1000+ | 8.22 EUR |
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Technische Details FDMS86350ET80 onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V.
Weitere Produktangebote FDMS86350ET80
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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FDMS86350ET80 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS86350ET80 - Leistungs-MOSFET, n-Kanal, 80 V, 198 A, 0.002 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 198A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 187W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm |
auf Bestellung 5987 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86350ET80 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS86350ET80 - Leistungs-MOSFET, n-Kanal, 80 V, 198 A, 0.002 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 198A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 187W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm |
auf Bestellung 5987 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86350ET80 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 25A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86350ET80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 140A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 187W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PQFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS86350ET80 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 25A/198A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V |
Produkt ist nicht verfügbar |
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FDMS86350ET80 | Hersteller : onsemi / Fairchild |
MOSFET 80V N-Channel PowerTrench MOSFET |
Produkt ist nicht verfügbar |
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| FDMS86350ET80 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 140A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 187W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PQFN8 |
Produkt ist nicht verfügbar |