FDMS8680 ON Semiconductor
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 269+ | 0.59 EUR |
| 272+ | 0.56 EUR |
| 274+ | 0.54 EUR |
| 275+ | 0.51 EUR |
| 276+ | 0.49 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.44 EUR |
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Technische Details FDMS8680 ON Semiconductor
Description: MOSFET N-CH 30V 14A/35A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V.
Weitere Produktangebote FDMS8680 nach Preis ab 0.61 EUR bis 5.43 EUR
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FDMS8680 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
auf Bestellung 2152 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
auf Bestellung 2152 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
auf Bestellung 6883 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
auf Bestellung 6883 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 14A/35A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V |
auf Bestellung 201 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS8680 | Hersteller : onsemi / Fairchild |
MOSFET 30V N-CHANNEL |
auf Bestellung 1541 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS8680 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS8680 - Leistungs-MOSFET, n-Kanal, 30 V, 35 A, 0.0055 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0055ohm |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS8680 - Leistungs-MOSFET, n-Kanal, 30 V, 35 A, 0.0055 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0055ohm |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : ONSEMI |
Description: ONSEMI - FDMS8680 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 165000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS8680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS8680 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS8680 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56 Drain-source voltage: 30V Drain current: 35A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Case: Power56 Gate charge: 26nC Mounting: SMD Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS8680 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 14A/35A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V |
Produkt ist nicht verfügbar |
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| FDMS8680 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56 Drain-source voltage: 30V Drain current: 35A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Case: Power56 Gate charge: 26nC Mounting: SMD Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |